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                      | Ȩ >»óǰ¼Ò°³ > Á¦Ç°º° ºÐ·ù  > Wafer  > Á¦Ç°»ó¼¼Á¤º¸ |  
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                                  | Silicon Wafer 8, 12 inch / ½Ç¸®ÄÜ ¿þÀÌÆÛ |  
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                                  |  | ÁÖ¿äÆ¯Â¡ |  
                                  |  | ¡á P-type, N-typeÀ¸·Î ±¸ºÐ
 ¡á 8ÀÎÄ¡ / 12ÀÎÄ¡·Î ±¸ºÐ (Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡)
 ¡á Grade´Â Prime Grade, Test Grade, Fallout Grade·Î ±¸ºÐ
 ¡á LPCVD, PECVD, Sputtering ÁõÂø Wafer °ø±Þ °¡´É (º°µµ »ó´ã ¹× °ßÀû ÇÊ¿ä)
 ¡á SK½ÇÆ®·Ð
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                                  |  | ¡Ü 8, 12ÀÎÄ¡ Dia : Dia Å©±â¿¡ µû¶ó µÎ²² Áõ°¡ 
 ¡Ü P(Positive) Type(Dopant Type)
 - Impurity(ºÒ¼ø¹°) Doping À¸·Î Àü±âÀû Ư¼ºÀ» ºÎ¿©
 ¡¤ 3°¡ ¿ø¼Ò(B, Al, Ga) DopingÀ¸·Î Ư¼ºÀ» º¯È½ÃÅ´
 ¡¤ ¾ç°øÀÌ ÀüÇÏ ¿î¹ÝÀÚÀÓ
 
 ¡Ü ÀúÇ× (¥Ø) : Impurity Doping ¾çÀÌ Áõ°¡Çϸé ÀúÇ×ÀÌ ³·¾ÆÁü
 
 ¡Ü ¿þÀÌÆÛÀÇ ¹æÇ⼺ Ç¥½Ã ¹æ¹ý
 - Notch
 ¡¤ °¡ÀåÀÚ¸®¿¡ ÀÛÀº VÀÚ ¸ð¾çÀÇ È¨À» ¸¸µå´Â °Í
 ¡¤ 200 mmÀÌ»ó ´ëÇü ¿þÀÌÆÛ¿¡¼ ÁÖ·Î »ç¿ë
 - Flat
 ¡¤ ¿þÀÌÆÛÀÇ °¡ÀåÀÚ¸®¿¡ ÀÏÁ¤ ±æÀÌÀÇ ÆòÆòÇÑ ºÎºÐÀ» ¸¸µë
 ¡¤ Primary Flat °ú Secondary Flat ÀÇ °¢µµ¿Í ±æÀ̸¦ ÅëÇØ ¿þÀÌÆÛÀÇ Á¾·ù¿Í µµÇÎÀ¯Çü ±¸ºÐ
 
 ¡Ü Orientation : 1-0-0
 - Àý´ÜÀ¸·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
 - ÃÖ±Ù¿¡´Â Àý´Ü º¸´Ù´Â Ç¥½Ã·Î °áÁ¤ Æò¸éÀ» ³ªÅ¸³¿
 - À̿ ÁÖÀÔ ¹æÇâÀ» ¼±ÅÃ
 
 ¡Ü Thermal Oxidation (»êȸ·)
 - °í¿Â¿¡¼ Silicon Wafer ¸¦ »êȽÃÄÑ SiO2 Àý¿¬¸·À» ¼ºÀå½ÃŰ´Â °øÁ¤
 - ÀåÁ¡ : º¸È£¸·(Surface Passivation), ºÒ¼ø¹° Á¦°Å(Surface Cleaning), ¼ÒÀÚ°£ °Ý¸®(Isolation)
 
 ¡Ü Grade
 - Prime Grade : Á¦Ç° ¾ç»ê¿ë, High Quality / High Cost
 - Test Grade : ¹æºñ À¯Áö °ü¸® ¹× ¿£Áö´Ï¾î ½ÇÇè µî, High Quality
 - Fallout Grade : ½ÇÇèÀ̳ª ±³À°¸ñÀû µî
 
 ¡Ü Ư¼ö»ç¾ç Wafer °øÁ¤
 - LPCVD (Low Pressure Chemical Vapor Deposition) : Nitride, Poly-Silicon, Amorphous Silicon ¾ç¸é ÁõÂø
 - PECVD (Plasma Enhanced Chemical Vapor Deposition) : Nitride, TEOS(Tetraethyl Orthosilicate), ACL(Amorphous Carbon Layer) ´Ü¸é ÁõÂø
 - Metal Sputtering : Al, Cu, Ti ÁõÂø
 
 ¡Ü SK½ÇÆ®·Ð
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									  |  Silicon Wafer , P -Type, 1-0-0 (Orientation) |  
                              | Cat. No | Model | Description | Unit | Price(VATº°µµ) | ³³±â | ºñ°í |  
                              | W04-171-801 | SW8P008P |  Silicon Wafer 8inch / P-type 4~12 / SSP | 25/PK | ¼ÒºñÀÚ°¡ : 2,819,300¿ø | 7 Day |  |  
                              | W04-171-804 | SW8P010P |  Silicon Wafer 8inch / P-type 8~12 / SSP | 25/PK | ¼ÒºñÀÚ°¡ : 2,819,300¿ø | 7 Day |  |  
                              | W04-171-807 | SW8P014P |  Silicon Wafer 8inch / P-type 3~25 / DSP | 25/PK | ¼ÒºñÀÚ°¡ : 2,819,300¿ø | 7 Day |  |  
                              | W04-171-810 | SW8P500TSN |  Silicon Wafer 8inch / P-type 1~50 / SSP / Notch | 25/PK | ¼ÒºñÀÚ°¡ : 1,762,000¿ø | 7 Day |  |  
                              | W04-171-813 | SW8P500TSF |  Silicon Wafer 8inch / P-type 1~50 / SSP / Flat | 25/PK | ¼ÒºñÀÚ°¡ : 1,762,000¿ø | 7 Day |  |  
                              | W04-171-816 | SW8P500TDF |  Silicon Wafer 8inch / P-type 1~50 / DSP / Flat | 25/PK | ¼ÒºñÀÚ°¡ : 2,153,600¿ø | 7 Day |  |  
                              | W04-171-819 | SW12P990F |  Silicon Wafer 12inch / P-type 1~99 / Fallout Grade / No COA | 25/PK | ¼ÒºñÀÚ°¡ : 2,192,800¿ø | 7 Day |  |  
                              | W04-171-822 | SW12P030T |  Silicon Wafer 12inch / P-type 1~30 / Test Grade / Particle 120nm 1,000EA | 25/PK | ¼ÒºñÀÚ°¡ : 2,545,200¿ø | 7 Day |  |  
                              | W04-171-825 | SW12P050T12 |  Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 120nm 50EA | 25/PK | ¼ÒºñÀÚ°¡ : 3,641,600¿ø | 7 Day |  |  
                              | W04-171-828 | SW12P050T05 |  Silicon Wafer 12inch / P-type 1~50 / Test Grade / Particle 50nm 50EA | 25/PK | ¼ÒºñÀÚ°¡ : 4,072,300¿ø | 7 Day |  |  
                              | W04-171-831 | SW12P010P05 |  Silicon Wafer 12inch / P-type 8~12 / Prime Grade / Particle 50nm 30EA | 25/PK | ¼ÒºñÀÚ°¡ : 4,698,800¿ø | 7 Day |  |  
                              | W04-171-834 | SW12P020P05 |  Silicon Wafer 12inch / P-type 14~27 / Prime Grade / Particle 50nm 30EA | 25/PK | ¼ÒºñÀÚ°¡ : 4,698,800¿ø | 7 Day |  |  
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									  |  Silicon Wafer, , P -Type, 1-0-0 (Orientation), Test Grade |  
                              | Cat. No | Model | Description | Unit | Price(VATº°µµ) | ³³±â | ºñ°í |  
                              | W04-171-851 | SSW8P500TND01 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.1um with Dry (1,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,349,400¿ø | 15 Day |  |  
                              | W04-171-854 | SSW8P500TND02 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.2um with Dry (2,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,427,700¿ø | 15 Day |  |  
                              | W04-171-857 | SSW8P500TND03 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Dry (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø | 15 Day |  |  
                              | W04-171-860 | SSW8P500TNW03 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.3um with Wet (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,192,800¿ø | 15 Day |  |  
                              | W04-171-863 | SSW8P500TNW05 |  Silicon Wafer, SiO2 8inch / P-type Notch / 0.5um with Wet (5,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,310,200¿ø | 15 Day |  |  
                              | W04-171-866 | SSW8P500TNW10 |  Silicon Wafer, SiO2 8inch / P-type Notch / 1.0um with Wet (10,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø | 15 Day |  |  
                              | W04-171-869 | SSW8P500TNW15 |  Silicon Wafer, SiO2 8inch / P-type Notch / 1.5um with Wet (15,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,878,000¿ø | 15 Day |  |  
                              | W04-171-872 | SSW8P500TNW20 |  Silicon Wafer, SiO2 8inch / P-type Notch / 2.0um with Wet (20,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 4,189,800¿ø | 15 Day |  |  
                              | W04-171-875 | SSW8P500TFD01 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.1um with Dry (1,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,349,400¿ø | 15 Day |  |  
                              | W04-171-878 | SSW8P500TFD02 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.2um with Dry (2,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,427,700¿ø | 15 Day |  |  
                              | W04-171-881 | SSW8P500TFD03 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Dry (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø | 15 Day |  |  
                              | W04-171-884 | SSW8P500TFW03 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.3um with Wet (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,192,800¿ø | 15 Day |  |  
                              | W04-171-887 | SSW8P500TFW05 |  Silicon Wafer, SiO2 8inch / P-type Flat / 0.5um with Wet (5,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,310,200¿ø | 15 Day |  |  
                              | W04-171-890 | SSW8P500TFW10 |  Silicon Wafer, SiO2 8inch / P-type Flat / 1.0um with Wet (10,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,643,100¿ø | 15 Day |  |  
                              | W04-171-893 | SSW8P500TFW15 |  Silicon Wafer, SiO2 8inch / P-type Flat / 1.5um with Wet (15,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 2,878,000¿ø | 15 Day |  |  
                              | W04-171-896 | SSW8P500TFW20 |  Silicon Wafer, SiO2 8inch / P-type Flat / 2.0um with Wet (20,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 4,189,800¿ø | 15 Day |  |  
                              | W04-171-899 | SSW12N1000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.1um (1,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,328,300¿ø | 15 Day |  |  
                              | W04-171-902 | SSW12N2000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.2um (2,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,406,600¿ø | 15 Day |  |  
                              | W04-171-905 | SSW12N3000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.3um (3,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,524,100¿ø | 15 Day |  |  
                              | W04-171-908 | SSW12N4000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.4um (4,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,641,600¿ø | 15 Day |  |  
                              | W04-171-911 | SSW12N5000 |  Silicon Wafer, SiO2 12inch / P-type Notch / 0.5um (5,000A) | 25/PK | ¼ÒºñÀÚ°¡ : 3,759,000¿ø | 15 Day |  |  |  |  |  
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